6 - 1 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com variable gain amplifiers - ch ip 6 HMC694 v03.1108 functional diagram the h m c694 is ideal for: ? p oint-to- p oint r adio ? p oint-to- m ulti- p oint r adio ? e w & e c m ? x- b and r adar ? test e quipment wide g ain control r ange: 23 d b s ingle control voltage output ip 3 @ m ax g ain: +30 d b m output p 1d b : +22 d b m n o e xternal m atching die s ize: 2.26 x 0.97 x 0.1 mm typical applications features general description gaas mmic analog variable gain amplifier, 6 - 17 ghz the h m c694 is a g a a s mmi c p h em t analog vari - able gain amplifer die which operates between 6 and 17 g hz. i deal for microwave radio applications, the amplifer provides up to 24 d b of gain, output p 1d b of up to 22 d b m, and up to 30 d b m of output ip 3 at maximum gain, while requiring only 170 m a from a +5v supply. a gate bias (vctrl) is provided to allow variable gain control up to 23 d b . g ain fatness is excellent from 6 to 17 g hz, making the h m c694 ideal for e w, e c m and radar applications. the h m c694 can easily be integrated into m ulti-chip- m odules ( m c m s) due to its small size and no external match - ing. a ll data is taken with the chip in a 50 ohm test fxture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm (12 mils). electrical specifcations, t a = +25 c, vdd1, 2, 3= 5v, vctrl= -2v, idd= 170 ma* p arameter min. typ. max. min. typ. max. units f requency r ange 6 - 10 10 - 17 ghz gain 19 24 17 21 db gain flatness 1 1.5 db g ain variation over temperature 0.03 0.03 db/ c g ain control r ange 23 20 db noise f igure 5.5 7.5 5 6.5 db input r eturn loss 15 12 db output r eturn loss 10 8 db output p ower for 1 d b compression (p1db) 19 21 21 22 dbm s aturated output p ower ( psat) 22 23 dbm output third order i ntercept (ip3) 30 30 dbm total s upply current (idd) 170 170 ma *s et vctrl = -2v and then adjust vgg1, 2 between -2v to 0v (typ. -0.8v) to achieve i dd = 170ma typical.
6 - 2 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com v ariable gain amplifiers - ch ip 6 HMC694 v03.1108 gaas mmic analog variable gain amplifier, 6 - 17 ghz output return loss vs. temperature broadband gain & return loss gain vs. temperature input return loss vs. temperature -30 -20 -10 0 10 20 30 4 6 8 10 12 14 16 18 20 22 24 26 s21 s11 s22 response (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 6 8 10 12 14 16 18 +25c +85c -55c return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 6 8 10 12 14 16 18 +25c +85c -55c return loss (db) frequency (ghz) 0 5 10 15 20 25 30 6 8 10 12 14 16 18 +25c +85c -55c gain (db) frequency (ghz) control voltage range vs. gain 0 5 10 15 20 25 5 7 9 11 13 15 17 19 gain (db) frequency (ghz) vctl = -2.0v vctl = 0v vctl = -1.2v vctl = -1.0v vctl = -1.3v vctl = -0.8v vctl = -1.1v gain vs. control voltage 0 5 10 15 20 25 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 gain (db) control voltage (v) 17 ghz 6 ghz 10 ghz 13 ghz
6 - 3 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com variable gain amplifiers - ch ip 6 HMC694 v03.1108 gaas mmic analog variable gain amplifier, 6 - 17 ghz p1db vs. temperature psat vs. temperature 0 4 8 12 16 20 24 28 4 6 8 10 12 14 16 18 +25c +85c -55c p1db (dbm) frequency (ghz) vctrl = -2v vctrl = 0v 0 4 8 12 16 20 24 28 4 6 8 10 12 14 16 18 +25c +85c -55c psat (dbm) frequency (ghz) vctrl = -2v vctrl = 0v return loss @ voltage extreme output return loss @ voltage extreme -30 -25 -20 -15 -10 -5 0 6 8 10 12 14 16 18 -2v 0v return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 6 8 10 12 14 16 18 -2v 0v return loss (db) frequency (ghz) noise figure vs. ctrl 4 6 8 10 12 14 16 18 20 22 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 noise figure (db) control voltage (v) 6 ghz 17 ghz 6 ghz 17 ghz (6, 8, 10, 12, 14, 17) ghz noise figure vs. temperature 0 2 4 6 8 10 6 8 10 12 14 16 18 +25c +85c -55c noise figure (db) frequency (ghz)
6 - 4 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com v ariable gain amplifiers - ch ip 6 HMC694 v03.1108 gaas mmic analog variable gain amplifier, 6 - 17 ghz output ip3 vs. temperature 10 14 18 22 26 30 34 4 6 8 10 12 14 16 18 +25c +85c -55c ip3 (dbm) frequency (ghz) vctrl = 0v, pout = 8dbm vctrl = -2v, pout = 15dbm reverse isolation vs. temperature -60 -50 -40 -30 -20 -10 0 6 8 10 12 14 16 18 +25c +85c -55c reverse isolation (db) frequency (ghz) output ip3 @ 10 dbm 16 18 20 22 24 26 28 30 -2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 ip3 (dbm) control voltage (v) 16 ghz 7 ghz 12 ghz output ip3 @ 0 dbm 12 14 16 18 20 22 24 26 28 -0.8 -0.6 -0.4 -0.2 0 ip3 (dbm) control voltage (v) 16 ghz 7 ghz 12 ghz output ip3 @ 5 dbm 12 14 16 18 20 22 24 26 28 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 ip3 (dbm) control voltage (v) 16 ghz 7 ghz 12 ghz
6 - 5 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com variable gain amplifiers - ch ip 6 HMC694 v03.1108 gaas mmic analog variable gain amplifier, 6 - 17 ghz outline drawing n ot es : 1. all d imensi o ns in in ch es [ millime t ers ] 2. n o co nne ct i o n re qu ire d f o r u nlabele d b o n d pa d s 3. d ie th i ck ness is 0.004 (0.100) 4. ty pi c al b o n d pa d is 0.004 (0.100) s qu are 5. ba ck si d e me t alli z a t i o n : g o l d 6. ba ck si d e me t al is gr ou n d 7. b o n d pa d me t ali z a t i o n : g o l d die packaging information [1] s tandard a lternate gp -2 ( g el p ack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. vdd1,2,3 (v) i dd total (m a ) +5 170 vgg1,2 (v) i gg total (m a ) 0v to -2v <3 a typical supply current vs. vdd absolute maximum ratings drain b ias voltage (vdd1, 2, 3) +5.5v g ate b ias voltage (vgg1, 2) -3 to 0v g ain control voltage (vctrl) -3 to 0v rf i nput p ower +5 d b m channel temperature 175 c continuous p diss (t= 85 c) (derate 10.2 mw/c above 85 c) 0.92 w thermal r esistance (channel to die bottom) 97.6 c/w s torage temperature -65 to +150 c operating temperature -55 to +85 c ele ct ro s t a t ic sensi t i v e de v ic e o bser v e h an d ling pre c a ut i o ns
6 - 6 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com v ariable gain amplifiers - ch ip 6 p ad n umber f unction description i nterface s chematic 1 rfin this pad is a c coupled and matched to 50 ohm. 2 - 4 vdd1, 2, 3 drain b ias voltage for the amplifer. s ee assembly diagram for required external components 5 rf out this pad is a c coupled and matched to 50 ohm. 6, 8 vgg1, 2 g ate control for amplifer. a djust voltage to achieve typical i dd. p lease follow mmi c a mplifer b iasing p rocedure application note. 7 vctrl g ain control voltage for the amplifer. s ee assembly diagram for required external components. die b ottom gn d die bottom must be connected to rf /dc ground. pad descriptions HMC694 v03.1108 gaas mmic analog variable gain amplifier, 6 - 17 ghz
6 - 7 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com variable gain amplifiers - ch ip 6 HMC694 v03.1108 gaas mmic analog variable gain amplifier, 6 - 17 ghz assembly diagram
6 - 8 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com v ariable gain amplifiers - ch ip 6 HMC694 v03.1108 gaas mmic analog variable gain amplifier, 6 - 17 ghz mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see h m c general handling, m ounting, b onding n ote). 50 ohm m icrostrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip ( f igure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane ( f igure 2). m icrostrip substrates should be placed as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: a ll bare die are placed in either waffle or g el based es d protec - tive containers, and then sealed in an es d protective bag for shipment. once the sealed es d protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do n ot attempt to clean the chip using liquid cleaning systems. static sensitivity: f ollow es d precautions to protect against es d strikes. transients: s uppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with a u s n eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. e utectic die a ttach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do n ot expose the chip to a temperature greater than 320 c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. e poxy die a ttach: a pply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with two 1 mil wires are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. b all bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. a ll bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. a ll bonds should be as short as possible, less than 12 mils (0.31 mm). 0.254mm (0.0 1 0) thic k mmic wi re bond rf gr ound plane 0.254mm (0.0 1 0) thic k alumina thin f ilm substrat e 0.07 6mm (0.003) f igur e 1. 0.102mm (0.004) thick gaas mmic wire bond rf ground plane 0.254mm (0.010) thick alumina thin film substrate 0.076mm (0.003) figure 2. 0.150mm (0.005) thick moly tab
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